STMicroelectronics STP12NM50FP N-Channel MOSFET, MDmesh™ series, 500 V Vdss, 12 A continuous drain, 350 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack, through hole.
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | -65°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 50µA |
| Rds on (Max) @ id, vgs | 350mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 39 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1000 pF @ 25 V |
The STP12NM50FP: The TO-220 Full Pack package has an isolated tab, so the heatsink does not need an insulating pad — a timesaver in offline power supply layouts where the tab sits at drain potential.
Gate threshold is 5 V max at 50 µA;
Junction temperature range is -65°C to 150°C. Power dissipation is 35 W at the case.
Finding a drop-in replacement helps avoid redesign when the part is unavailable.
Buyers need to know if they can still source the part or need to plan for EOL.
Immediate availability is critical for production runs.
Planning for BOM lead times requires current lead time estimates.
Design engineers need pin configuration for layout.
Sourcing flexibility when the original part is unavailable.