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STMicroelectronics STP12NM50 — Discrete Semiconductors

STP12NM50 N-Channel MOSFET, 500V 12A TO-220, MDmesh

MPNSTP12NM50
Active

STMicroelectronics STP12NM50, MDmesh N-Channel MOSFET, 500V Vdss, 12A Id, 350mOhm Rds(on) @ 6A 10V, 39nC Qg, TO-220-3, Through Hole, -65 to 150°C.

$4.2900Ref. price · indicative, final on quote
STMicroelectronics STP12NM50 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP12NM50 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation160W (Tc)
Operating temperature-65°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 50µA
Rds on (Max) @ id, vgs350mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 25 V

Product details

500 V MDmesh N-channel in a TO-220

It comes in a standard TO-220 through-hole package, designed for heatsink mounting in high-voltage switching applications.

Conduction and switching parametrics

Gate charge totals 39 nC at 10 V, a moderate value that keeps gate-drive power manageable at switching frequencies typical of offline converters and PFC stages. Input capacitance Ciss is 1000 pF at 25 V drain-source, which influences the switching speed and the driver's peak current requirement. The threshold voltage range is specified with a 5 V maximum at 50 µA drain current.

Temperature range and power dissipation

Frequently asked questions

What is the Rds(on) of the STP12NM50?

This is the worst-case figure at 25°C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet.