High-voltage MOSFET for offline power stages
The TO-220-3 through-hole package is a standard fit for heatsink-mounting on a main PCB or a separate heatsink bracket.
With a typical gate charge of 87 nC at 10 V and an input capacitance of 2620 pF at 25 V drain bias, the STP12NK80Z demands a gate driver capable of sourcing and sinking a few amperes peak if you intend to switch above 50 kHz. The 4.5 V gate threshold at 100 µA is comfortably below the 10 V recommended drive, so standard 10 V–15 V gate-drive rails from a PWM controller or a dedicated driver IC will saturate the channel fully. The ±30 V absolute gate-source rating provides margin against ringing on long gate traces.
NRND — plan the last-time-buy now
For a production BOM that already qualifies this MOSFET, the smart move is to secure the LTB quantity now and qualify a pin-compatible drop-in before the window closes. For new designs, skip this part and look at ST's current SuperMESH or MDmesh generation in the same voltage and current class.