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STMicroelectronics STP12N65M5 — Discrete Semiconductors

STP12N65M5 N-Channel MOSFET, 650V 8.5A TO-220

MPNSTP12N65M5
Active

STMicroelectronics MDmesh™ V series, N-channel MOSFET, STP12N65M5, 650 V drain-source, 8.5 A continuous drain, 430 mOhm Rds(on) at 10 V gate drive, 22 nC gate charge, TO-220-3 through-hole package.

$2.8100Ref. price · indicative, final on quote
STMicroelectronics STP12N65M5 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP12N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.5A (Tc)
Power dissipation70W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs430mOhm @ 4.3A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds900 pF @ 100 V

Product details

650 V, 8.5 A — what this MOSFET is for

The STP12N65M5 is an N-channel power MOSFET from STMicroelectronics' MDmesh™ V series, rated for 650 V drain-to-source voltage and 8.5 A continuous drain current at 25 °C case temperature. It comes in a TO-220-3 through-hole package, the standard footprint for medium-power through-hole designs.

On-resistance and gate charge — the switching trade-off

For a 650 V device in this current class, that on-resistance is competitive — it keeps I²R losses manageable in a 70 W package.

There is no last-time-buy window, no NRND flag, and no announced end-of-life.

Mounting and thermal notes

The tab is the drain.

Frequently asked questions

What is the difference between STP12N65M5 and STP9N65M5?

The STP9N65M5 is a lower-current variant in the same MDmesh V series, rated for 650 V but with 7 A continuous drain current and a higher Rds(on) of 600 mOhm. The STP12N65M5 offers 8.5 A and 430 mOhm, making it the better choice for designs that need lower conduction loss at higher load currents.