The STP12N120K5: Total gate charge is 44.2 nC at 10 V. A 10 V drive rail is required to achieve the rated Rds(on); the gate is rated for ±30 V maximum.
Thermal and environmental range
Input capacitance is 1370 pF at 100 V drain-source.
STP12N120K5 MOSFET, 1200 V, 12 A
MPNSTP12N120K5
Active
STMicroelectronics MDmesh™ K5 series, N-Channel MOSFET, 1200 V Vdss, 12 A continuous drain, 690 mOhm Rds(on) at 6 A, 10 V, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
$11.9800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 690mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1370 pF @ 100 V |
Product details
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