STMicroelectronics STripFET™ II STP120NF10, N-Channel MOSFET, 100 Vdss, 110 A Id, 10.5 mOhm Rds(on) at 10 V Vgs, TO-220-3, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 110A (Tc) |
| Power dissipation | 312W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 10.5mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 233 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5200 pF @ 25 V |
The STP120NF10: Total gate charge is 233 nC at 10 V Vgs, with an input capacitance of 5200 pF at 25 V drain-source.
The TO-220 tab is the drain terminal; the copper pad area on the PCB and any heatsink determine the real thermal resistance.
The maximum on-resistance is 10.5 mOhm at 60 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations at the rated gate voltage.