STMicroelectronics DeepGATE™, STripFET™ VI series, N-Channel MOSFET, 40 V Vdss, 80 A continuous drain (Tc), 4.3 mOhm Rds(on) at 40 A, 10 V, TO-220-3 through hole, AEC-Q101 qualified, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | DeepGATE™, STripFET™ VI |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4.3mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 65 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3850 pF @ 25 V |
The STP120N4F6: The 110 W maximum power dissipation at case temperature and 4.3 mOhm Rds(on) at 40 A, 10 V define the thermal budget.
AEC-Q101 qualified. Maximum gate-to-source voltage is ±20 V.
The base product number is STP120, which covers the family; the full order code STP120N4F6 is the specific variant with the TO-220 package and automotive grade.
The datasheet provides critical electrical and physical specifications needed for design validation.
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