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STMicroelectronics STP11NM80 — Discrete Semiconductors

STP11NM80 N-Channel MOSFET, 800V, 11A, TO-220-3

MPNSTP11NM80
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STMicroelectronics STP11NM80, N-Channel MOSFET, MDmesh™ series, 800V Vdss, 11A Id, 400mOhm Rds(on), TO-220-3 through-hole package, -65 to 150°C junction temperature.

$6.1100Ref. price · indicative, final on quote
STMicroelectronics STP11NM80 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP11NM80 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation150W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs400mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs43.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1630 pF @ 25 V

Product details

The STP11NM80: The TO-220-3 through-hole package suits point-of-load and PFC stages on aluminium or FR4 boards where the thermal pad can be bolted to a heatsink — not a surface-mount design. Gate charge is 43.6 nC at 10 V; input capacitance is 1630 pF at 25 V.

Standard franchised distribution channels carry this part; independent supply is available for spot requirements.

Temperature range and package — industrial power environments

Gate threshold voltage is specified at 5 V maximum with 250 µA drain current, and the recommended drive voltage for minimum on-resistance is 10 V. This is a standard-threshold device, not a logic-level gate — a 5 V PWM from a microcontroller will not fully enhance it; a 10 V gate driver stage is required to achieve the rated 400 mOhm Rds(on).

Frequently asked questions

What is the Rds(on) of STP11NM80?

This is the conduction-loss figure used for thermal design — at lower gate voltages the Rds(on) rises significantly, so a 10 V gate driver is required to achieve the rated value.