STMicroelectronics MDmesh™ II series, STP11NM65N, N-Channel MOSFET, 650 V Vdss, 11 A continuous drain, 455 mOhm Rds(on) at 10 V, 29 nC gate charge, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 455mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 800 pF @ 50 V |
Maximum on-resistance is 455 mOhm at a drain current of 5.5 A and a gate drive of 10 V. The typical gate charge is 29 nC at 10 V, which together with an input capacitance of 800 pF at 50 V drain-source gives a reasonable switching figure of merit for a 650 V device.
Availability is limited to surplus and broker channels.
Yes, STMicroelectronics lists the STP11NM65N as Obsolete. It is no longer in production and is not recommended for new designs.
The evidence does not list an official successor. For a pin-compatible alternative, consider other 650 V N-channel MOSFETs in the TO-220-3 package from STMicroelectronics' MDmesh series, such as the STP11NM65FP (same die in a fully isolated TO-220FP package) or newer MDmesh V devices. Verify electrical compatibility against your specific operating conditions.
Both use the same MDmesh™ II die with 650 V, 11 A ratings. The STP11NM65N is in a standard TO-220-3 package, while the STP11NM65FP is in a fully isolated TO-220FP package, which eliminates the need for a mica insulator and provides galvanic isolation between the tab and the heatsink.