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STMicroelectronics STP11NM60N — Discrete Semiconductors

STP11NM60N N-Channel MOSFET, 600 V, 10 A, TO-220

MPNSTP11NM60N
Obsolete

STMicroelectronics STP11NM60N, MDmesh™ II N-channel MOSFET, 600 V Vdss, 10 A Id, 450 mOhm Rds(on), 31 nC Qg, TO-220-3, through-hole.

STMicroelectronics STP11NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP11NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 50 V

Product details

600 V, 10 A — the switching transistor for off-line supplies

Obsolete — sourcing strategy for sustainment

STMicroelectronics lists the STP11NM60N as obsolete.

Parametric profile for the replacement search

The TO-220-3 through-hole package with a metal tab allows direct heatsink mounting. Maximum power dissipation is 90 W at the case temperature, with the junction rated to 150 °C. The tab is electrically connected to the drain — an insulating pad and thermal grease are needed for a grounded heatsink.

Frequently asked questions

What are the specs of STP11NM60N?

The STP11NM60N is a 600 V, 10 A N-channel MOSFET from the MDmesh™ II series. It comes in a TO-220-3 through-hole package.