STMicroelectronics FDmesh™ N-Channel MOSFET, 600 V drain-source, 11 A continuous drain, 450 mOhm Rds(on) at 10 V, 40 nC gate charge, TO-220 Full Pack (TO-220FP) through-hole package.
| Parameter | Value |
|---|---|
| Series | FDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 35W (Tc) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 450mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 900 pF @ 25 V |
The STP11NM60FDFP: Gate charge totals 40 nC at 10 V.
Through-hole mounting (TO-220) suits point-of-load and offline power supplies where board-level rework or manual assembly is expected; the 0.50 mm pitch of a standard TO-220 footprint is straightforward for wave-solder or hand-solder processes.
No franchised allocation signal — the part is in the mature phase of its cycle.
The maximum on-resistance is 450 mOhm at 5.5 A drain current with 10 V gate-to-source drive.
Total gate charge is 40 nC maximum at 10 V gate drive.