Gate charge and switching loss budget
The STP11NM60FD: Total gate charge is 40 nC at 10 V, with an input capacitance of 900 pF at 25 V drain bias.
Through-hole TO-220-3 package with a maximum power dissipation of 160 W at the case.
STP11NM60FD
STMicroelectronics · FDmesh™ Series
STMicroelectronics FDmesh™ series, STP11NM60FD, N-Channel MOSFET, 600 Vdss, 11 A continuous drain, 450 mOhm Rds(on) at 10 V, 40 nC gate charge, TO-220-3 through-hole package.
[IN STOCK] In Stock: 20 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | FDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 160W (Tc) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 450mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 900 pF @ 25 V |
Technical details
STP11NM60FD
[ALLOC] verified