Gate charge and switching loss budget
The STP11NM60FD: Total gate charge is 40 nC at 10 V, with an input capacitance of 900 pF at 25 V drain bias.
Through-hole TO-220-3 package with a maximum power dissipation of 160 W at the case.
STP11NM60FD MOSFET, N-Ch 600V 11A TO-220, FDmesh™
MPNSTP11NM60FD
Active
STMicroelectronics FDmesh™ series, STP11NM60FD, N-Channel MOSFET, 600 Vdss, 11 A continuous drain, 450 mOhm Rds(on) at 10 V, 40 nC gate charge, TO-220-3 through-hole package.
$5.1000Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesFDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | FDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 160W (Tc) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 450mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 900 pF @ 25 V |
Product details
Frequently asked questions
What package does STP11NM60FD come in?
Through-hole TO-220-3 package, with the supplier device package listed as TO-220.