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STMicroelectronics STP11NM60A — Discrete Semiconductors

STP11NM60A N-Channel MOSFET, 600 V, 11 A, TO-220-3

MPNSTP11NM60A
Obsolete

STMicroelectronics MDmesh™ N-Channel MOSFET, 600 V, 11 A, 450 mOhm, TO-220-3, Through Hole, -55°C to 150°C.

$3.1500Ref. price · indicative, final on quote
STMicroelectronics STP11NM60A datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP11NM60A specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1211 pF @ 25 V

Product details

The STP11NM60A: The through-hole TO-220-3 package is a standard, hand-solderable form factor that bolts to a heatsink or PCB, common in offline power supplies, AC-DC converters, lighting ballasts, and motor drives.

The 600 V drain-source breakdown voltage provides headroom for rectified mains with margin for transients. Gate charge of 49 nC at 10 V is moderate. The 110 W power dissipation ceiling at case temperature tells you the thermal path matters.

For BOM lines that need this exact part, the supply route is the independent distribution market — surplus and new-old-stock inventory sourced from overstock, decommissioned equipment, or distributor closeouts.

Frequently asked questions

What is the Vgs threshold of STP11NM60A?

The maximum gate threshold voltage is 4 V at a drain current of 250 µA. That means the device starts conducting when the gate-to-source voltage exceeds roughly 3 to 4 V, but for a fully enhanced low-resistance state you need to drive the gate to 10 V.