650 V MDmesh™ — the high-voltage switching transistor for power supplies and motor drives
The STP11NM60 is an STMicroelectronics N-channel power MOSFET from the MDmesh™ series, built for high-voltage switching applications where low on-resistance and fast switching matter. Rated at 650 V drain-to-source voltage and 11 A continuous drain current, it handles the primary switch role in offline flyback converters, power-factor-correction stages, and motor-drive inverters up to a few hundred watts.
ST has not issued a last-time-buy notice as of the current record, but the designation signals that the STP11NM60 is no longer the preferred choice for new product introductions. For an existing BOM line that already qualifies this MOSFET, the NRND flag means you should evaluate a drop-in or functionally equivalent replacement before a formal EOL notice appears.
Gate charge and input capacitance — the switching-speed trade-off
The 30 nC typical gate charge at 10 V and 1000 pF input capacitance at 25 V drain bias are moderate numbers for a 650 V device. A gate-driver IC capable of sourcing at least 1 A peak current will switch the STP11NM60 in the tens of nanoseconds, which keeps crossover losses low in a 100 kHz hard-switched converter. The ±25 V maximum gate-to-source rating gives margin for gate-drive overshoot if the layout is clean.
TO-220-3 package — mounting and thermal notes
Through-hole TO-220-3 package with the tab as the drain connection.