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STMicroelectronics STP11NM50N — Discrete Semiconductors

STP11NM50N N-Channel MOSFET, 500V 8.5A TO-220

MPNSTP11NM50N
Obsolete

STMicroelectronics MDmesh™ II, N-Channel MOSFET, 500 V Vdss, 8.5 A Id, 470 mOhm Rds(on) @ 4.5 A, 10 V, 19 nC Qg, TO-220-3, Through Hole, -55°C to 150°C.

$2.0200Ref. price · indicative, final on quote
STMicroelectronics STP11NM50N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP11NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.5A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs470mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds547 pF @ 50 V

Product details

500 V, 8.5 A N-channel in a TO-220 — what it does

STP11NM50N is an N-channel MOSFET in a through-hole TO-220-3 package. With a total gate charge of 19 nC at 10 V, the gate-drive power requirement stays low — a small driver IC can switch this FET at moderate frequencies without excessive drive losses.

That means STMicroelectronics has ended production and there is no official last-time-buy window still open.

The 470 mOhm Rds(on) at 4.5 A and 10 V is the on-resistance at the specified test conditions.

Temperature range and heatsink consideration

Frequently asked questions

What is the Rds(on) of STP11NM50N?

The maximum Rds(on) is 470 mOhm at a drain current of 4.5 A and a gate-to-source voltage of 10 V. This is the on-resistance at the specified test conditions; actual on-resistance increases with junction temperature.

Does STP11NM50N require a heatsink?

For any continuous drain current above a few amps, a heatsink is required. The maximum power dissipation is 70 W at the case temperature, but the junction-to-ambient thermal resistance of a bare TO-220 is much higher — a heatsink is needed to keep the junction below 150°C.