STMicroelectronics
STMicroelectronics SuperMESH N-Channel MOSFET, 500 V drain-source, 10 A continuous drain, 520 mOhm Rds(on) at 10 V gate drive, 68 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C operating range.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 520mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1390 pF @ 25 V |
The STP11NK50Z: The TO-220-3 package is a through-hole part. The 125 W power dissipation rating assumes the tab is bolted to a heatsink.
STMicroelectronics lists the STP11NK50Z as Active. No need to stockpile or hunt for a last-time-buy window.
