STMicroelectronics SuperMESH N-Channel MOSFET, 500 V drain-source, 10 A continuous drain, 520 mOhm Rds(on) at 10 V gate drive, 68 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C operating range.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 520mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1390 pF @ 25 V |
The STP11NK50Z: The TO-220-3 package is a through-hole part. The 125 W power dissipation rating assumes the tab is bolted to a heatsink.
STMicroelectronics lists the STP11NK50Z as Active. No need to stockpile or hunt for a last-time-buy window.
It can switch at frequencies up to about 100 kHz in a hard-switched topology, but above that the gate-drive losses and the driver's ability to charge/discharge that capacitance in the switching period become the limiting factor. For higher frequencies, look at a lower-gate-charge part in the same voltage class.
The STP11NK50ZFP is the fully isolated TO-220FP version. The FP suffix means the tab is overmolded with plastic, so the tab is electrically isolated from the drain. The standard STP11NK50Z has the tab at drain potential. Electrically the die is the same; the isolation changes the thermal resistance and mounting requirements.