STMicroelectronics STP11N65M5, N-Channel MOSFET, MDmesh™ V, 650 V Vdss, 9 A Id, 480 mOhm Rds(on) at 4.5 A, 10 V drive, 17 nC Qg, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 480mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 644 pF @ 100 V |
That combination of 480 mOhm and 17 nC is typical of a 650 V super-junction MOSFET optimised for efficiency in the 100–200 W range, not for the lowest Rds(on) at the expense of switching speed.
The maximum power dissipation of 85 W at case temperature Tc is a junction-limited figure — real-world dissipation depends on the heatsink's thermal resistance and ambient airflow.
This moderate charge value keeps gate-drive losses low in medium-frequency switching applications up to around 100 kHz.
The 17 nC gate charge and 644 pF input capacitance at 100 V drain-source bias suit it for switching frequencies up to about 100 kHz in hard-switched topologies. For higher frequencies, a MOSFET with lower gate charge and capacitance would be more appropriate.
Within the same MDmesh V family, STMicroelectronics offers several 650 V N-channel MOSFETs in TO-220 packages with varying Rds(on) and current ratings. A direct pin-compatible alternative would share the same TO-220-3 footprint and gate-drive voltage requirements. Check the STP series for parts with similar voltage and package but different on-resistance or current levels.