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STMicroelectronics STP11N60DM2 — Discrete Semiconductors

STP11N60DM2 MOSFET N-CH 600V 10A TO-220, 420mOhm

MPNSTP11N60DM2
Active

ST MDmesh™ DM2 STP11N60DM2, N-Channel MOSFET, 600V Vdss, 10A Id, 420mOhm Rds(on) @ 10V, 16.5nC Qg, TO-220-3, -55°C to 150°C.

$1.7300Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP11N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs420mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs16.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds614 pF @ 100 V

Product details

600 V, 10 A N-channel — the offline power workhorse

At 10 A the Rds(on) climbs with junction temperature — the 110 W power dissipation rating at the case is the ceiling, not a continuous operating point.

Gate charge and switching — what the driver sees

Total gate charge is 16.5 nC at 10 V, with an input capacitance of 614 pF at 100 V drain bias. The 5 V gate threshold at 250 µA is a typical figure for standard-threshold MDmesh devices. For full enhancement the drive voltage should be 10 V as specified for the Rds(on) measurement — 5 V barely turns it on.

Temperature range and the rework bench

The TO-220 is a through-hole part — you can replace it with a soldering iron and a desoldering wick, no hot-air station needed.

Frequently asked questions

What is the Rds(on) of the STP11N60DM2?

That is the spec at 25°C junction temperature; expect it to rise by roughly 50% at 125°C junction.