STMicroelectronics SuperMESH3™ N-Channel MOSFET, 525 V Vdss, 10 A continuous drain (Tc), 510 mOhm Rds(on) at 10 V gate drive, 51 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 525 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 510mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 51 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1400 pF @ 50 V |
STMicroelectronics lists the STP11N52K3 as obsolete. If the design can tolerate a package or rating change, a cross-reference search against the 525 V / 10 A / TO-220 class may yield an active alternative, but no pin-compatible second source is recorded here.
525 V Vdss, 510 mOhm Rds(on) at 10 V, 51 nC gate charge, 1400 pF input capacitance at 50 V, 125 W power dissipation at case temperature.
No official replacement part number is recorded for STP11N52K3. A cross-reference search against 525 V, 10 A, TO-220 N-channel MOSFETs from STMicroelectronics or other manufacturers may identify an active alternative, but no pin-compatible second source is documented here.
The lifecycle record does not include a RoHS compliance statement. The base product number is STP11N, and the TO-220 package is commonly available in RoHS-compliant variants, but this specific order code should be verified against the manufacturer's latest documentation at time of order.