STMicroelectronics STripFET™ series, STP110N8F7 N-Channel MOSFET, 80 V Vdss, 80 A Id, 7.5 mOhm Rds(on) at 10 V, 46.8 nC Qg, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 170W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 7.5mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 46.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3435 pF @ 40 V |
The gate threshold voltage is specified at a maximum of 4.5 V with 250 µA drain current, and the recommended drive voltage for achieving the rated on-resistance is 10 V. Input capacitance is 3435 pF at 40 V drain-source, a figure to consider when sizing the gate drive circuit for rise and fall times.
The evidence does not list an official successor order code from STMicroelectronics. For an equivalent replacement, review ST's current STripFET™ or STripFET™ F7 series for an N-channel MOSFET with similar 80 V Vdss, 80 A Id, and 7.5 mΩ Rds(on) ratings in a TO-220 package. Contact our sourcing team for cross-reference assistance.