STP110N7F6

STMicroelectronics

STMicroelectronics STripFET™ F6 STP110N7F6 N-channel MOSFET, 68 V Vdss, 110 A Id, 6.5 mOhm Rds(on) at 55 A/10 V, TO-220-3 through-hole, -55 to 175 °C junction.

STMicroelectronics STP110N7F6
[IN STOCK] In Stock: 2,870 pcs
$0.73/ pc

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Technical specifications

STP110N7F6 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage68 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation176W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5850 pF @ 25 V

Technical details

68 V, 110 A N-channel MOSFET from the STripFET F6 family

The 68 V Vdss gives you about 15 % headroom above a typical 48 V nominal rail (like telecom or battery-backed systems), enough to handle load-dump transients without avalanche stress. The 110 A continuous current rating at 25 °C case is a package-limited figure — in practice, derate based on your actual case temperature and the 176 W power dissipation ceiling. Gate charge of 100 nC at 10 V means the driver needs to source about 1 A peak to hit a 100 ns switching edge, so pair it with a gate driver rated for at least 2 A.

STMicroelectronics lists the STP110N7F6 as Obsolete. No last-time-buy window remains; procurement relies on surplus or broker channel inventory.

STP110N7F6
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