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STMicroelectronics STP110N10F7 — Discrete Semiconductors

STP110N10F7 N-Channel MOSFET, 100V 110A TO-220, 7mOhm

MPNSTP110N10F7
Active

STMicroelectronics DeepGATE™, STripFET™ VII STP110N10F7, N-Channel MOSFET, 100V Vdss, 110A Id, 7mOhm Rds(on) @ 10V, 60nC Qg, TO-220-3, -55 to 175°C.

$2.8600Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesDeepGATE™, STripFET™ VII
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP110N10F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5500 pF @ 50 V

Product details

At 55A drain current with 10V on the gate, the maximum Rds(on) is 7 mOhm. That is the figure a designer uses to calculate I²R conduction loss at full load. For a 55A RMS current, dissipation runs about 21W — well within the 150W package limit at case temperature, but it still demands a heatsink sized for the duty cycle. The 60 nC typical gate charge at 10V is moderate; the gate driver needs to source and sink that charge fast enough to keep switching losses from dominating the total dissipation.

It is rated for environments where ambient heat and self-heating stack — engine bay electronics, industrial motor drives, power supplies in sealed enclosures. The 5500 pF input capacitance at 50V Vds is a reminder that the gate-drive loop must be laid out tightly to avoid ringing at higher switching frequencies.

It is ROHS3 Compliant, so no exemption paperwork for EU or similar regulated markets. The base product number STP110 covers the family; the F7 suffix identifies this specific on-resistance and gate-charge variant in the DeepGATE™ STripFET™ VII generation.

Frequently asked questions

Is STP110N10F7 RoHS compliant?

Yes, it is ROHS3 Compliant.

What is the difference between STP110N10F7 and STP110N10F6?

Both are 100V 110A N-channel MOSFETs in the same STripFET™ family, but the F7 variant uses the DeepGATE™ process and carries a 7 mOhm Rds(on) rating, while the F6 variant has a different on-resistance spec. The F7 is the later-generation part with improved figure of merit for switching applications.