60 V, 10 A P-channel — TO-220 power switch
The STP10P6F6 is a P-Channel MOSFET from STMicroelectronics, built on the DeepGATE™ and STripFET™ VI process generation. The 6.4 nC typical gate charge at 10 V and 340 pF input capacitance at 48 V drain bias keep the gate drive burden low — a standard 12 V gate-driver IC or a simple BJT push-pull stage can switch it at moderate frequencies without excessive crossover loss.
STMicroelectronics lists the STP10P6F6 as Obsolete. The TO-220-3 package (Supplier Device Package TO-220) is a standard through-hole footprint.
The gate threshold voltage is specified at 4 V maximum with 250 µA drain current, and the recommended drive voltage for the rated on-resistance is 10 V. Maximum power dissipation is 30 W at case temperature, and the junction is rated to 175 °C. In a TO-220 package bolted to a heatsink, the thermal path through the tab is the primary concern — the junction-to-case thermal resistance determines how much continuous current the part can carry before hitting the temperature ceiling.