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STMicroelectronics STP10NM65N — Discrete Semiconductors

STP10NM65N N-Channel 650 V 9 A MOSFET, MDmesh II, TO-220

MPNSTP10NM65N
Obsolete

STMicroelectronics MDmesh™ II series, STP10NM65N, N-Channel MOSFET, 650 V drain-source, 9 A continuous drain, 480 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP10NM65N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs480mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 50 V

Product details

The 480 mOhm Rds(on) and 25 nC gate charge match the original design parameters. The MDmesh II die structure is the same vertical mesh technology; no layout or heatsink change is needed.

TO-220 package — thermal and assembly fit

Through-hole TO-220-3 package with the standard 2.54 mm pitch lead form. The metal tab is the drain terminal and must be electrically isolated or connected to the drain node in the layout. Maximum power dissipation is 90 W at case temperature, but the real thermal limit depends on the heatsink-to-ambient thermal resistance and the ambient air flow. The junction temperature range is -55 to 150 °C, covering industrial and some automotive under-hood environments.

Frequently asked questions

Is STP10NM65N obsolete and what is the replacement?

Yes, the STP10NM65N is listed as obsolete. For a pin-compatible replacement within the same 650 V / 9 A class, a designer would need to evaluate current ST MDmesh series parts (e.g. MDmesh V or MDmesh K5) that match the Rds(on) and gate charge profile, but no direct cross-reference is published.

What is the Rds(on) of STP10NM65N?

This is the value used for conduction loss calculations at the rated operating point.