The STP10NM60N: The 550 mOhm maximum on-resistance at 4 A, 10 V gate drive sets the conduction loss floor for a 600 V switching stage. The TO-220-3 through-hole package (supplier device package TO-220) allows direct heatsink mounting with a single screw, making it a practical choice for point-of-load and offline power supplies where board space is not the primary constraint.
STP10NM60N
STMicroelectronics · MDmesh™ II Series
STMicroelectronics MDmesh™ II series, STP10NM60N, N-Channel MOSFET, 600 V drain-source, 10 A continuous drain, 550 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55 to 150 °C junction temperature.
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 550mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 540 pF @ 50 V |
Technical details
STP10NM60N
[ALLOC] verified