The STP10NM60N: The 550 mOhm maximum on-resistance at 4 A, 10 V gate drive sets the conduction loss floor for a 600 V switching stage. The TO-220-3 through-hole package (supplier device package TO-220) allows direct heatsink mounting with a single screw, making it a practical choice for point-of-load and offline power supplies where board space is not the primary constraint.
STP10NM60N MOSFET N-CH 600V 10A TO-220, MDmesh II
MPNSTP10NM60N
Active
STMicroelectronics MDmesh™ II series, STP10NM60N, N-Channel MOSFET, 600 V drain-source, 10 A continuous drain, 550 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55 to 150 °C junction temperature.
$3.0200Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 550mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 540 pF @ 50 V |
Product details
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