STMicroelectronics SuperMESH™ STP10NK80ZFP, N-Channel MOSFET, 800 Vdss, 9 A continuous drain, 900 mOhm Rds(on) at 4.5 A, 10 Vgs, 72 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2180 pF @ 25 V |
The STP10NK80ZFP: The 900 mOhm Rds(on) at 4.5 A, 10 Vgs sets the conduction loss floor.
The TO-220FP full-pack case limits dissipation to 40 W at the case. The 9 A continuous drain rating at 25°C case temperature derates above that point.
The maximum on-resistance is 900 mOhm at a drain current of 4.5 A with a 10 V gate-source drive. This is the value used for conduction-loss calculations in the switching application.