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STMicroelectronics STP10NK80Z — Discrete Semiconductors

ST STP10NK80Z N-Channel MOSFET, 800 V, 9 A, TO-220

MPNSTP10NK80Z
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STMicroelectronics SuperMESH™ N-channel MOSFET, STP10NK80Z, 800 V Vdss, 9 A continuous drain current, 900 mOhm Rds(on) at 10 V, 72 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$4.2300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP10NK80Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs900mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2180 pF @ 25 V

Product details

Gate drive and switching considerations

The gate-source voltage is rated to ±30 V, providing margin against overshoot in hard-switched topologies.

Thermal and power dissipation

Maximum power dissipation is 190 W at case temperature, but the practical limit is set by the junction-to-case thermal resistance and the heatsink. The TO-220 package allows mounting to a heatsink with a thermal pad or mica insulator — the tab is the drain terminal, so electrical isolation is required in most designs. At 9 A continuous drain current, the conduction loss at 900 mOhm is 73 W — exceeding the package's dissipation capability without a substantial heatsink. In practice, the device is used at lower average currents or in pulsed operation where the thermal time constant of the heatsink absorbs the peak power.

Frequently asked questions

What is the Rds(on) of STP10NK80Z?

The maximum on-resistance is 900 mOhm at 4.5 A drain current and 10 V gate drive.