STP10NK80Z

STMicroelectronics

STMicroelectronics SuperMESH™ N-channel MOSFET, STP10NK80Z, 800 V Vdss, 9 A continuous drain current, 900 mOhm Rds(on) at 10 V, 72 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STP10NK80Z
Download datasheet (PDF)
[IN STOCK] In Stock: 23 pcs
$3.70/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STP10NK80Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs900mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2180 pF @ 25 V

Technical details

Gate drive and switching considerations

The gate-source voltage is rated to ±30 V, providing margin against overshoot in hard-switched topologies.

Thermal and power dissipation

Maximum power dissipation is 190 W at case temperature, but the practical limit is set by the junction-to-case thermal resistance and the heatsink. The TO-220 package allows mounting to a heatsink with a thermal pad or mica insulator — the tab is the drain terminal, so electrical isolation is required in most designs. At 9 A continuous drain current, the conduction loss at 900 mOhm is 73 W — exceeding the package's dissipation capability without a substantial heatsink. In practice, the device is used at lower average currents or in pulsed operation where the thermal time constant of the heatsink absorbs the peak power.

STP10NK80Z
[ALLOC] verified
Quote