Gate charge and switching — what 70 nC buys
Input capacitance (Ciss) is 1370 pF at 25 V drain-source.
Thermal and mounting — TO-220-3 reality
Lifecycle and procurement check
ROHS3 compliant.
STP10NK60Z N-Channel MOSFET, 600V, 10A, TO-220-3
MPNSTP10NK60Z
Active
STMicroelectronics SuperMESH N-Channel MOSFET, STP10NK60Z, 600 V Vdss, 10 A Id, 750 mOhm Rds(on) at 4.5 A, 10 V, TO-220-3, Tube, -55°C to 150°C.
$3.3300Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 115W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 750mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1370 pF @ 25 V |
Product details
Frequently asked questions
What is the Rds(on) of STP10NK60Z?
This is the value used for worst-case conduction loss budgeting.