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STMicroelectronics STP10NK50Z — Discrete Semiconductors

STMicroelectronics STP10NK50Z

MPNSTP10NK50Z
Obsolete
$1.2000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP10NK50Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs700mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs39.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1219 pF @ 25 V