950 V N-channel MOSFET for high-voltage power conversion
The STP10N95K5 is a 950 V N-channel power MOSFET from STMicroelectronics' SuperMESH5™ series, designed for high-voltage switched-mode power supplies, flyback converters, and power-factor-correction stages. The 950 V drain-to-source voltage rating provides ample headroom for universal-input offline designs where reflected voltage spikes can exceed 800 V.
Conduction and switching losses — sizing the thermal solution
With a maximum Rds(on) of 800 mOhm at 4 A drain current and 10 V gate drive, the STP10N95K5's conduction loss at the 8 A continuous drain rating reaches roughly 5.1 W at 25°C junction. The 130 W power dissipation capability (Tc) assumes an infinite heatsink — real-world designs must derate based on the TO-220 package's thermal resistance to the ambient.
Package and mounting — through-hole for high-reliability connections
Housed in a TO-220-3 through-hole package, the STP10N95K5 suits designs where vibration resistance and manual rework are priorities over board density. The ±30 V maximum gate-source voltage gives margin for gate-drive overshoot in noisy environments.
The base product number STP10 covers the family; confirm the full suffix for your BOM line.