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STMicroelectronics STP10N80K5 — Discrete Semiconductors

STP10N80K5 N-Channel MOSFET, 800 V, 9 A, TO-220-3

MPNSTP10N80K5
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STMicroelectronics MDmesh™ K5 series N-Channel MOSFET, 800 V Vdss, 9 A continuous drain current, 600 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$1.7361Ref. price · indicative, final on quote
STMicroelectronics STP10N80K5 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP10N80K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs600mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds635 pF @ 100 V

Product details

800 V N-channel MOSFET in TO-220 — the MDmesh K5 workhorse

The STP10N80K5 is an 800 V N-channel power MOSFET from STMicroelectronics' MDmesh K5 series, housed in a TO-220-3 through-hole package.

Paired with a 22 nC gate charge, the STP10N80K5 offers a balanced figure of merit for conduction and switching loss. In a 100 W flyback running at 65 kHz, the lower Qg reduces driver dissipation compared to older-generation 800 V parts with similar Rds(on). The 10 V drive requirement means a standard gate-driver IC or bootstrap supply works without level shifting.

Package and mounting — TO-220 with through-hole leads

The TO-220-3 package is a through-hole form factor with a metal tab for heatsink attachment. The tab is electrically common with the drain. The three-lead body fits a 2.54 mm pitch footprint common across TO-220 devices, simplifying layout reuse from an existing 800 V MOSFET design.

Frequently asked questions

What is the difference between STP10N80K5 and STP10N80K3?

Both are 800 V N-channel MOSFETs in TO-220 from ST's MDmesh series. The K5 variant typically offers lower gate charge and improved switching performance compared to the earlier K3 generation, making it better suited for higher-frequency designs. Specific parametric differences should be verified against the respective datasheets for your operating point.