650 V, 10 A N-channel — where it fits in the power stage
The STMicroelectronics STP10N65K3 is a 650 V, 10 A N-channel power MOSFET in a through-hole TO-220-3 package. It is part of the SuperMESH3 family, designed for high-voltage switching applications such as offline power supplies, AC-DC converters, and PFC stages.
The 650 V drain-source breakdown voltage gives adequate margin for universal-input (85–265 VAC) offline converters, where the rectified DC bus peaks around 375 V. The 1 Ohm Rds(on) at 10 V gate drive is specified at 3.6 A drain current; at lower gate voltages (e.g., 5 V logic-level drive) the on-resistance roughly doubles, so a 10 V gate supply is strongly recommended to achieve the rated performance.
