STMicroelectronics STP10N60M2, N-channel MDmesh™ II Plus MOSFET, 600 V Vdss, 7.5 A continuous drain, 600 mOhm Rds(on) at 10 V gate, 13.5 nC gate charge, -55°C to 150°C junction, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.5A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 400 pF @ 100 V |
This is the figure to use for conduction loss calculations at the rated current. Input capacitance is 400 pF at 100 V drain-source, contributing to the fast switching edges that reduce crossover losses in hard-switched topologies.
The TO-220-3 package with through-hole mounting suits point-of-load and offline power stages where thermal interface to a heatsink is required.
The STP10N60M2 is from the MDmesh™ II Plus series, which is a later generation than the original STP10N60. Pin-compatible in the TO-220 package, but the M2 variant offers lower Rds(on) and gate charge. Check the specific parametric differences in the respective datasheets before drop-in replacement.