STMicroelectronics MDmesh N-Channel MOSFET, STP10LN80K5, 800 V drain-source, 8 A continuous drain, 630 mOhm Rds(on) at 10 V, 15 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 630mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 427 pF @ 100 V |
With 630 mOhm Rds(on) at 4 A and 10 V, the conduction loss at 4 A is roughly 10 W — well within the 110 W dissipation budget when the case is properly heatsunk.
The exposed metal tab is the drain connection and the primary thermal path to the heatsink.
For a form-fit-function substitute within the same MDmesh family, a parametric search on 800 V Vdss, 8 A Id, and TO-220 package will surface candidates — but no direct pin-compatible replacement is documented here.