STMicroelectronics STP105N3LL, N-Channel MOSFET, DeepGATE™ STripFET™ VI series, 30V Vdss, 80A Id, 3.5mOhm Rds(on) at 10V, 42nC Qg, TO-220-3 through-hole, 175°C Tj.
| Parameter | Value |
|---|---|
| Series | DeepGATE™, STripFET™ VI |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 3.5mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 42 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3100 pF @ 25 V |
Gate charge is specified at 42 nC with a 4.5 V drive. That is low enough to switch at tens of kHz with a standard gate-driver IC without excessive cross-conduction delay.
The TO-220-3 through-hole package is a mature, widely sourced form factor — the base product number STP105 covers the family, so cross-referencing date codes and lot traceability is straightforward through independent distribution.
The continuous drain current rating is 80 A at 25 °C case temperature.
The part is ROHS3 compliant, which restricts lead and other hazardous substances.