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STMicroelectronics STP100N10F7 — Discrete Semiconductors

STP100N10F7 N-Channel MOSFET, 100 V, 80 A, 8 mΩ, TO-220

MPNSTP100N10F7
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STMicroelectronics DeepGATE™, STripFET™ VII series N-Channel MOSFET, TO-220-3, 100 V Vdss, 80 A continuous drain, 8 mΩ Rds(on) at 10 V, -55°C to 175°C junction temperature.

$3.0700Ref. price · indicative, final on quote
STMicroelectronics STP100N10F7 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP100N10F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs61 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4369 pF @ 50 V

Product details

100 V, 80 A N-channel MOSFET for high-current switching

The STMicroelectronics STP100N10F7 is an N-channel power MOSFET built on the DeepGATE™ and STripFET™ VII process technology.

8 mΩ Rds(on) — conduction loss at 40 A

At 40 A the I²R dissipation is roughly 12.8 W at the max on-resistance, which the 150 W package power rating can handle with an adequate heatsink. The specified gate charge of 61 nC at 10 V indicates moderate switching speed; the drive voltage for minimum on-resistance is 10 V, so a 12 V gate supply is the practical choice for full enhancement.

Frequently asked questions

What is the Vgs(th) of STP100N10F7?

The maximum gate threshold voltage (Vgs(th)) is 4.5 V at a drain current of 250 µA.