100 V, 80 A N-channel MOSFET for high-current switching
The STMicroelectronics STP100N10F7 is an N-channel power MOSFET built on the DeepGATE™ and STripFET™ VII process technology.
8 mΩ Rds(on) — conduction loss at 40 A
At 40 A the I²R dissipation is roughly 12.8 W at the max on-resistance, which the 150 W package power rating can handle with an adequate heatsink. The specified gate charge of 61 nC at 10 V indicates moderate switching speed; the drive voltage for minimum on-resistance is 10 V, so a 12 V gate supply is the practical choice for full enhancement.