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STMicroelectronics STP03D200 — Discrete Semiconductors

STP03D200 NPN Darlington, 1200 V, 100 mA, TO-220

MPNSTP03D200
Active

STMicroelectronics STP03D200 NPN Darlington transistor, 1200 V Vce, 100 mA Ic, 40 W, TO-220-3, Tube.

$8.9700Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP03D200 specifications
ParameterValue
MountingThrough Hole
FET typeNPN - Darlington
Voltage - collector emitter breakdown1200 V
Current - collector (Ic)100 mA
Current - collector cutoff100µA
DC current gain (hFE) (Min) @ ic, vce200 @ 30mA, 10V
Power - max40 W
Operating temperature150°C (TJ)
PackageTube
CaseTO-220-3
Vce saturation (Max) @ ib, ic2V @ 500µA, 50mA

Product details

The STP03D200: The Darlington pair gives a minimum DC current gain (hFE) of 200 at 30 mA, 10 V, so the base drive requirement stays low even when switching the full collector current. Maximum power dissipation is 40 W, and the Vce saturation is specified at 2 V maximum with a 500 µA base current driving 50 mA collector current — a useful figure for estimating conduction loss in a switching or linear application.

The tab is the collector — the heatsink interface needs electrical isolation unless the entire assembly shares the collector potential. Supplied in Tube packaging, which is the standard for through-hole power devices and works well for manual insertion or low-volume assembly.

Frequently asked questions

Where can I buy STP03D200 and how do I get a price?

The STP03D200 is an active STMicroelectronics part. Submit an RFQ for a firm quote.

What is the maximum power dissipation of the STP03D200?

The STP03D200 is rated for a maximum power dissipation of 40 W. This figure assumes proper heatsinking; the TO-220 tab must be thermally managed to stay within the 150 °C junction temperature limit.