STN1NK80Z is an 800 V N-Channel MOSFET in a SOT-223 surface-mount package.
What the 16 Ohm Rds(on) and 7.7 nC gate charge mean for your driver and thermal budget
The total gate charge is 7.7 nC at 10 V.
STN1NK80Z N-Channel MOSFET, 800 V, 250 mA, SOT-223
MPNSTN1NK80Z
End of Life
STMicroelectronics SuperMESH™ N-Channel MOSFET, 800 V Vdss, 250 mA continuous drain, 16 Ohm Rds(on) at 10 V, SOT-223 surface-mount package.
$1.21Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 250mA (Tc) |
| Power dissipation | 2.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 16Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 7.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 160 pF @ 25 V |
Product details
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