STN1NK80Z is an 800 V N-Channel MOSFET in a SOT-223 surface-mount package.
What the 16 Ohm Rds(on) and 7.7 nC gate charge mean for your driver and thermal budget
The total gate charge is 7.7 nC at 10 V.
STN1NK80Z
STMicroelectronics · SuperMESH™ Series
STMicroelectronics SuperMESH™ N-Channel MOSFET, 800 V Vdss, 250 mA continuous drain, 16 Ohm Rds(on) at 10 V, SOT-223 surface-mount package.
[IN STOCK] In Stock: 22 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 250mA (Tc) |
| Power dissipation | 2.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 16Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 7.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 160 pF @ 25 V |
Technical details
STN1NK80Z
[ALLOC] verified