STMicroelectronics STripFET™ III, STL8DN6LF3, Dual N-Channel MOSFET, 60V Vdss, 20A Id, 30mOhm Rds(on) at 4A, 10V, Logic-Level Gate, AEC-Q101, PowerFlat (5x6) package.
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 20A |
| Power - max | 65W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Qualification | AEC-Q101 |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 30mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 668pF @ 25V |
The STL8DN6LF3 is a dual N-channel MOSFET from STMicroelectronics' STripFET™ III series, housed in an 8-lead PowerVDFN with a PowerFlat (5x6) footprint. Without that pad connection, the junction temperature rises well above the 175 °C absolute maximum under sustained load.
Yes, the STL8DN6LF3 is AEC-Q101 qualified, making it suitable for automotive-grade applications including under-hood and engine-bay environments. The -55 °C to 175 °C junction temperature range supports the thermal extremes found in those locations.
Yes, the FET feature is listed as Logic Level Gate.