STL7N10F7

STMicroelectronics · DeepGATE™, STripFET™ VII Series

STMicroelectronics DeepGATE™, STripFET™ VII, STL7N10F7, N-Channel MOSFET, 100V Vdss, 7A Id, 35mOhm Rds(on) @ 10V, 14nC Qg, PowerFlat 3.3x3.3, -55 to 150°C.

STMicroelectronics STL7N10F7
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STL7N10F7 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tj)
Power dissipation2.9W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 50 V

Technical details

100 V N-channel in a compact PowerFlat — what the ratings mean

The headline on-resistance is 35 mOhm maximum at 3.5 A drain current with a 10 V gate drive. Gate charge is 14 nC at 10 V, a low figure that keeps gate-drive losses modest in high-frequency switching. Input capacitance is 920 pF at 50 V Vds.

The junction temperature range spans -55 to 150 °C, covering automotive under-hood, industrial motor drives, and outdoor telecom enclosures. The 150 °C maximum junction temperature gives headroom for peak-load transients in compact layouts where ambient temperature runs high.

ROHS3 compliance is confirmed.

STL7N10F7
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