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STMicroelectronics STL7N10F7

STL7N10F7 N-Channel MOSFET, 100V, 35mOhm, PowerFlat

MPNSTL7N10F7
End of Life

STMicroelectronics DeepGATE™, STripFET™ VII, STL7N10F7, N-Channel MOSFET, 100V Vdss, 7A Id, 35mOhm Rds(on) @ 10V, 14nC Qg, PowerFlat 3.3x3.3, -55 to 150°C.

$1.72Ref. price · indicative, final on quote
STMicroelectronics STL7N10F7 datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesDeepGATE™, STripFET™ VII
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STL7N10F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tj)
Power dissipation2.9W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 50 V

Product details

100 V N-channel in a compact PowerFlat — what the ratings mean

The headline on-resistance is 35 mOhm maximum at 3.5 A drain current with a 10 V gate drive. Gate charge is 14 nC at 10 V, a low figure that keeps gate-drive losses modest in high-frequency switching. Input capacitance is 920 pF at 50 V Vds.

The junction temperature range spans -55 to 150 °C, covering automotive under-hood, industrial motor drives, and outdoor telecom enclosures. The 150 °C maximum junction temperature gives headroom for peak-load transients in compact layouts where ambient temperature runs high.

ROHS3 compliance is confirmed.

Frequently asked questions

What is the Rds(on) of STL7N10F7?

The maximum on-resistance is 35 mOhm at 3.5 A drain current with a 10 V gate drive.

Does STL7N10F7 work with 5V gate drive?

The maximum gate threshold voltage is 4.5 V, so a 5 V drive will barely turn the device on. The rated 35 mOhm Rds(on) requires a 10 V gate drive. At 5 V, expect significantly higher on-resistance and reduced current capability.