STMicroelectronics STripFET™ F6, STL60P4LLF6, P-Channel MOSFET, 40V Vdss, 60A Id, 14mOhm Rds(on) @ 10V, 34nC Qg, PowerFlat™ (5x6), 175°C TJ, Surface Mount.
| Parameter | Value |
|---|---|
| Series | STripFET™ F6 |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 100W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 1V @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 14mOhm @ 6.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3525 pF @ 25 V |
The STL60P4LLF6 is a P-Channel MOSFET from ST's STripFET™ F6 series, rated for 40 V drain-source and 60 A continuous drain current at the case. It comes in a PowerFlat™ (5x6) surface-mount package. The 175 °C maximum junction temperature allows deployment in hot environments like engine bays or enclosed power supplies without early derating.
The gate threshold voltage is 1 V typical at 250 µA, and the drive voltage range includes 4.5 V and 10 V. A 5 V logic gate driver can fully enhance the channel, though the on-resistance is specified at 10 V for the minimum Rds(on).