STMicroelectronics STL210N4F7AG, STripFET F7 series, N-Channel MOSFET, 40V Vdss, 120A Id, 1.6 mOhm Rds(on) at 10V, 43 nC Qg, PowerFlat 5x6 package, AEC-Q101 qualified, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ F7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.6mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 43 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3600 pF @ 25 V |
The STL210N4F7AG: Total gate charge is 43 nC at 10 V, and input capacitance measures 3600 pF at 25 V drain-source — numbers that define the gate-driver current needed to hit a target switching frequency without excessive crossover loss. The 4 V maximum gate threshold at 250 µA drain current means the device turns on cleanly with standard 5 V or 10 V gate drive logic; the ±20 V Vgs max gives headroom for drive transients in noisy automotive rails.
This qualifies it for under-hood and chassis-domain applications where thermal cycling and vibration are factors.