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STMicroelectronics STL13NM60N

STL13NM60N N-Channel 600 V 10 A MOSFET, MDmesh II

MPNSTL13NM60N
End of Life

STMicroelectronics MDmesh™ II N-Channel MOSFET, 600 V Vdss, 10 A Id, 385 mOhm Rds(on) at 10 V, 30 nC Qg, PowerFlat™ (8x8) HV package, Surface Mount, ROHS3 compliant.

$3.29Ref. price · indicative, final on quote
STMicroelectronics STL13NM60N datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STL13NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation3W (Ta), 90W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs385mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 50 V

Product details

600 V, 10 A — the switching power supply workhorse

The STL13NM60N: 600 V Vdss and 10 A Id suit offline flyback and forward converters, PFC stages, and auxiliary power supplies.

Input capacitance is 790 pF at 50 V Vds.

Thermal and package reality

Maximum power dissipation is 3 W at Ta and 90 W at Tc. Junction temperature ceiling is 150 °C.

ROHS3 compliant per. For volume BOM positions, this part can be dual-sourced within the MDmesh II family by matching the 600 V / 10 A / PowerFlat HV footprint, though no official cross-reference is listed in this record.

Frequently asked questions

Is STL13NM60N discontinued or obsolete?

No.

Can STL13NM60N be used for switching power supplies?

Yes. The 600 V Vdss and 10 A Id rating, combined with 30 nC gate charge and 385 mOhm Rds(on), make it suitable for offline flyback, forward, and PFC stages operating from a 400 V DC bus.