650 V N-channel MOSFET for high-voltage switching
The STL13N65M2: The 17 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies; the 590 pF input capacitance at 100 V drain-source gives a sense of the drive current needed at the target frequency.
Thermal and package constraints for the layout
The PowerFlat 5x6 HV package dissipates up to 52 W at the case. The gate-source voltage must stay within ±25 V absolute maximum — the 10 V drive used for the Rds(on) spec is well inside that window.
Active production with no end-of-life notice
ROHS3 compliant per the current revision.