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STMicroelectronics STL13N60DM2

STMicroelectronics STL13N60DM2 N-Ch 600V 8A MOSFET

MPNSTL13N60DM2
End of Life

STMicroelectronics MDmesh DM2 series, STL13N60DM2, N-Channel MOSFET, 600 Vdss, 8 A continuous drain (Tc), 370 mOhm Rds(on) at 4 A, 10 V, 19 nC Qg, PowerFlat HV 5x6 package, Surface Mount, ROHS3 compliant.

$2.04Ref. price · indicative, final on quote
STMicroelectronics STL13N60DM2 datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STL13N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation52W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs370mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds730 pF @ 100 V

Product details

600 V, 8 A, 370 mOhm — the conduction-loss number

The STL13N60DM2: Gate charge totals 19 nC at 10 V, with an input capacitance of 730 pF at 100 V drain-source. The 52 W power dissipation ceiling in the PowerFlat 5x6 HV package gives headroom for a 600 V, 8 A die in a surface-mount outline.

The 370 mOhm Rds(on) at Vgs=10 V is the max at room temperature; expect the on-resistance to roughly double at 125 °C junction, which is normal for a planar-like DM2 structure. The 19 nC total gate charge means a 1 A gate driver can switch this FET in under 20 ns, keeping the Miller plateau short in a hard-switched converter. Maximum gate-source voltage is ±25 V, and the threshold voltage is 5 V max at 250 µA.

Frequently asked questions

Is the STL13N60DM2 RoHS compliant?

Yes, the STL13N60DM2 is ROHS3 compliant per the manufacturer's listing.