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STMicroelectronics STL130N8F7

STL130N8F7 N-Channel MOSFET, 80 V, 130 A, 3.6 mOhm

MPNSTL130N8F7
End of Life

STMicroelectronics DeepGATE™, STripFET™ VII STL130N8F7, N-Channel MOSFET, 80 Vds, 130 A Id, 3.6 mOhm Rds(on) at 10 V, 96 nC Qg, PowerFlat™ 5x6, -55°C to 175°C.

$2.89Ref. price · indicative, final on quote
STMicroelectronics STL130N8F7 datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesDeepGATE™, STripFET™ VII
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STL130N8F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation135W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs3.6mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs96 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6340 pF @ 40 V

Product details

80 V, 130 A N-channel — STripFET VII generation

The 80 V rating provides headroom for 48 V automotive and industrial bus systems, while the 130 A continuous rating suits primary switches in DC-DC converters, motor drives, and battery management.

Conduction and switching — what the numbers mean

Rds(on) of 3.6 mOhm at 10 V is the conduction loss floor. At 130 A, I²R loss is 61 W — the 135 W power dissipation rating (Tc) leaves margin for switching losses, but the thermal pad must be well-sunk to keep junction temperature below 175°C. Gate charge of 96 nC at 10 V sets the driver current requirement. Input capacitance of 6340 pF at 40 V Vds influences switching speed and driver sizing.

Housed in the PowerFlat™ 5x6 mm (8-PowerVDFN) surface-mount package. Mounting is surface-mount only.

Frequently asked questions

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