Skip to main content
STMicroelectronics STL120N8F7

STL120N8F7 N-Channel MOSFET, 80 V, 120 A, 4.4 mOhm

MPNSTL120N8F7
End of Life

STMicroelectronics STripFET™ F7 STL120N8F7, N-channel MOSFET, 80 V drain-source, 120 A continuous drain current, 4.4 mOhm Rds(on) at 10 V, PowerFlat (5x6) package, -55°C to 175°C junction temperature.

$2.22Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesSTripFET™ F7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STL120N8F7 specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation4.8W (Ta), 140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.4mOhm @ 11.5A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4570 pF @ 25 V

Product details

Total gate charge is 60 nC at 10 V, with an input capacitance of 4570 pF measured at 25 V drain-source. For a 100 kHz switching frequency, the gate driver must supply about 6 mA average current to charge and discharge the gate; a driver with 2 A peak capability handles the switching transition cleanly without excessive crossover conduction. The threshold voltage window tops out at 4 V at 250 µA drain current, so a 5 V gate drive will not fully enhance the channel to the minimum Rds(on) — the datasheet specifies 10 V as the drive voltage for the rated on-resistance. Designs using 3.3 V logic need a level-shifted gate driver.

Surface-mount in an 8-PowerVDFN package, supplier device code PowerFlat (5x6).

ROHS3 compliant.

Frequently asked questions

Is STL120N8F7 suitable for automotive applications?

Confirm with the manufacturer for automotive-grade certification.

What is the Rds(on) of STL120N8F7?

Maximum on-resistance is 4.4 mOhm at 11.5 A drain current with 10 V gate drive.