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STMicroelectronics STI6N95K5

STI6N95K5 MOSFET, 950V N-Channel, 1.25 Ohm Rds(on)

MPNSTI6N95K5
End of Life

STMicroelectronics STI6N95K5, N-Channel MOSFET, MDmesh™ K5 series, 950 Vdss, 9 A continuous drain, 1.25 Ohm Rds(on) at 3 A, 10 V, 90 W power dissipation, TO-262-3 (I2PAK) through-hole package, -55°C to 150°C junction temperature.

$2.28Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STI6N95K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.25Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 100 V

Product details

Rds(on) and gate charge — what they mean for the switching loop

Maximum on-resistance is 1.25 Ohm at 3 A drain current and 10 V gate drive. Gate charge is 13 nC at 10 V.

Temperature range and package for harsh environments

Rated for a junction temperature range of -55°C to 150°C. The TO-262 through-hole package allows direct heatsink mounting via the tab.

Active lifecycle — no LTB risk for new designs

The STI6N95K5 carries an Active product status with ROHS3 compliance. There is no end-of-life notice or last-time-buy window on this part, so it can be specified into new production BOMs without near-term obsolescence concern.

Frequently asked questions

Is STI6N95K5 obsolete or active?

STI6N95K5 is Active in production with no end-of-life notice. It is ROHS3 compliant and suitable for new designs.