What this MOSFET is built for
The STH200N10WF7-2 is an N-channel power MOSFET in the STripFET F7 family, rated for 100 V drain-source and 180 A continuous drain current. The TO-263-3 (D2Pak) surface-mount package with a large exposed tab lets you pull heat into the board plane; the 340 W power dissipation rating at the case tells you the thermal path is the limiting factor, not the silicon.
Gate drive and switching behaviour
Gate charge is 93 nC at 10 V, and the recommended drive voltage is 10 V for the lowest Rds(on). The 4.5 V threshold at 250 µA means a logic-level gate driver at 5 V will turn the device on, but the Rds(on) will be higher than the 4 mOhm spec — the 10 V drive figure is the one to design to for full conduction. Input capacitance of 4430 pF at 25 V drain-source is moderate for this current class; the gate driver needs to source and sink enough peak current to hit the switching speed the application requires without excessive cross-conduction.
Thermal and environmental reach
The 340 W dissipation at the case is a theoretical ceiling — real-world derating depends on the PCB copper area and airflow. The D2Pak tab is the primary heat path; a thermal-via array under the tab is standard practice for keeping junction temperature inside the 175°C limit at full load.