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STMicroelectronics STGY40NC60VD

STGY40NC60VD IGBT 600V 80A PowerMESH™ TO-247

MPNSTGY40NC60VD
End of Life

STMicroelectronics PowerMESH™ IGBT, STGY40NC60VD, 600 V Collector-Emitter Breakdown, 80 A Collector, 260 W, TO-247-3 Through Hole, -55°C ~ 150°C.

$6.76Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
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Specifications

STGY40NC60VD Technical Specifications
ParameterValue
SeriesPowerMESH™
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)80 A
Power - max260 W
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Gate charge214 nC
CaseTO-247-3
Test condition390V, 40A, 3.3Ohm, 15V
Switching energy330µJ (on), 720µJ (off)
Td (on/off) @ 25°C43ns/140ns
Vce(on) (Max) @ vge, ic2.5V @ 15V, 40A
Reverse recovery time44 ns

Product details

600 V, 80 A — the power switch this BOM needs

The STGY40NC60VD is a 600 V, 80 A IGBT from ST's PowerMESH™ series, housed in a through-hole TO-247-3 package. It is designed for medium-frequency power switching where conduction losses and ruggedness matter more than raw switching speed — think motor drives, UPS inverters, welding machines, and induction heating stages that run in the 10–40 kHz range. The collector-emitter saturation voltage is 2.5 V typical at 15 V gate drive and 40 A collector current, which is the operating point the switching energy numbers are measured against: 330 µJ turn-on, 720 µJ turn-off at 390 V bus, 40 A, 3.3 Ω gate resistor.

Conduction loss and thermal budget

At 260 W maximum power dissipation in the TO-247 package, the thermal design must keep the junction below 150 °C. The 2.5 V Vce(on) at 40 A gives 100 W conduction loss at that current — derating is required above 25 °C case temperature, and the heatsink selection is the gating factor for continuous operation. The 214 nC total gate charge at 15 V means the gate driver needs to source and sink roughly 2 A peak to hit the 43 ns turn-on and 140 ns turn-off delay times. A standard 1 A gate driver will stretch those edges, increasing switching losses.

Switching performance at the test point

Tested at 390 V, 40 A with a 3.3 Ω gate resistor and 15 V gate drive, the device delivers 330 µJ turn-on and 720 µJ turn-off switching energy. The 44 ns reverse recovery time of the internal diode contributes to the turn-on loss budget. The 600 V breakdown voltage gives 20–30 % headroom on a 400 V DC bus — adequate for most single-phase and three-phase rectified mains applications. The 80 A collector rating is a peak pulse limit; continuous current is package- and temperature-limited.

Production status and compliance

ROHS3 compliant per. The TO-247-3 (MAX247™) through-hole package is a standard power footprint.

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